The field-assisted turn-off thyristor: a regenerative device with voltage-controlled turn-off

摘要

A solid-state switching element, the field-assisted turn-off (FATO) thyristor, has been developed. This is a regenerative device, which implies that it is capable of carrying very large current densities, with a very small forward voltage drop when it is in its on-state. Most regenerative devices cannot be turned off with a control signal; however, the structure of the FATO thyristor allows it to be switched off by applying a voltage to a high impedance, insulated-gate terminal. This device can also be fabricated with an insulated-gate turn-on structure, so that it is fully switchable using only low-current control signals. The design, fabrication, and characterization of the FATO thyristor are described.