A time-dependent two-dimensional analysis of the turn-off process in a gate turn-off thyristor (GTO)

摘要

A time-resolved free-carrier absorption technique is used to describe transient gate turn-off thyristor (GTO) phenomena two-dimensionally. The measurements are spatially resolved in the anode-to-cathode direction, as well as in the direction determined by the cathode length. Effects associated with charge removal during the GTO turn-off cycle with respect to external circuit conditions are discussed. The behavior of resistively and inductively loaded GTOs is explained on the basis of experimental results. Modeled results published by others are used for comparison.