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A Fast Switching Insulated-Gate P-I-N Diode Controlled Thyristor Structure

机译：一种快速开关绝缘栅p-I-N二极管控制晶闸管结构

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摘要

A new Insulated-Gate PIN Diode Controlled Thyristor (IGPDT) structure is reported. Its on-state and turn-off characteristics are studied using two-dimensional numerical simulations. Results show that the IGPDT achieves similar on-state characteristics compared to that of the trench BRT (Base Resistance Controlled Thyristor), and also provides gate turn-off capability up to current density of several hundred A/cm 2. However, resistive switching turn-off speed of the IGFDT is approximately 3 times faster than that of the trench BRT

机译：报道了一种新的绝缘栅PIN二极管可控硅（IGPDT）结构。使用二维数值模拟研究了它的通态和关断特性。结果表明，与沟槽BRT（基极电阻控制晶闸管）相比，IGPDT具有类似的导通状态特性，并且还提供了高达几百A / cm 2的电流密度的栅极关断能力。 IGFDT的起飞速度大约是沟槽BRT的3倍

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Sin JKO; Lai PT; Ng WT; Poon MC; Jun C;
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年度 1996
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正文语种 eng
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专利

1. A new Insulated-Gate Thyristor structure with turn-off achieved by controlling the base-resistance [J] . Ajit J.S. IEEE Electron Device Letters . 1995,第9期

机译：通过控制基极电阻可实现具有关断功能的新型绝缘栅晶闸管结构
2. Steady state characterization of an optically controlled p-i-n diode for low frequency switching under front/back illumination [J] . Schwartzenberg J.W., Nwankpa C.O. IEEE Transactions on Electron Devices . 1996,第7期

机译：前/后照明下用于低频开关的光控P-I-N二极管的稳态特性
3. Fast Switching 4H-SiC P-i-n Structures Fabricated by Low Temperature Diffusion of Al [J] . I. G. Atabaev, Kh. N. Juraev, V. A. Pak, Advances in condensed matter physics . 2017,第期

机译：快速切换4H-SiC P-I-N结构，由Al的低温扩散制造
4. A fast switching insulated-gate P-I-N diode controlled thyristor structure [C] . Cai Jun, Sin, J.K.O. . 1996

机译：快速开关绝缘栅P-I-N二极管控制的晶闸管结构
5. 4H-silicon carbide gate turn-off thyristor and merged p-i-n and Schottky barrier diode. [D] . Cao, Lihui. 2000

机译：4H碳化硅栅极截止晶闸管，并合并了p-i-n和肖特基势垒二极管。
6. An Optically Stabilized Fast-Switching Light Emitting Diode as a Light Source for Functional Neuroimaging [O] . Daniel A. Wagenaar 2009

机译：光稳定的快速开关发光二极管作为功能性神经成像的光源
7. Fast Switching 4H-SiC P-i-n Structures Fabricated by Low Temperature Diffusion of Al [O] . I. G. Atabaev, Kh. N. Juraev, V. A. Pak 2017

机译：快速切换4H-SiC P-I-N结构，由Al的低温扩散制造
8. High-Temperature, 400 W, DC-to-AC Inverter Using Silicon Carbide Gate Turn- Off Thyristors and p-i-n Diodes [R] . Tipton, C. W. , Bayne, S. B. , Scozzie, C. J. , 2003

机译：采用碳化硅栅极关断晶闸管和p-i-n二极管的高温400 W直流 - 交流逆变器

A Fast Switching Insulated-Gate P-I-N Diode Controlled Thyristor Structure

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