An advanced Ge preamorphization salicide technology for ultra-thin-film SOI CMOS devices

摘要

In this letter, we propose a new approach to implement salicide on thin-film silicon-on-insulator (SOI) through the amorphization of the source/drain (S/D) regions by a germanium implantation. The amorphous film greatly reduces the silicide formation energy and effectively controls the silicide depth. This results in a much lower thermal cycle and increased flexibility in the choice of metal thickness. SOI NMOS devices fabricated using this novel salicide technology have shown substantially reduced S/D resistance as well as good device performance. This technology is applicable to PMOS SOI MOSFETs as well.