A new cobalt salicide technology for 0.15-/spl mu/m CMOS devices

摘要

A new cobalt (Co) salicide technology for sub-quarter micron CMOS transistors has been developed using high-temperature sputtering and in situ vacuum annealing. Sheet resistance of 11 /spl Omega///spl square/ for both gate electrode and diffusion layer was obtained with 5-nm-thick Co film. No line width dependence of sheet resistance was observed down to 0.15-/spl mu/m-wide gate electrode and 0.33-/spl mu/m-wide diffusion layer. The high temperature sputtering process led to the growth of epitaxial CoSi/sub 2/ layers with high thermal stability. By using this technology 0.15 /spl mu/m CMOS devices which have shallow junctions were successfully fabricated.