Approach for an Area-Efficient and Scalable CMOS Performance Based on Advanced Silicon-On-Insulator (SOI), Silicon-On-Sapphire (SOS) and Silicon-On-Nothing (SON) Technologies

摘要

The invention provides the guided design approach to optimize the device performance for a best area-efficient layout footprint in a single-leg MOS device that is based on any of the SOI, SOS or SON technologies. The design methodology depends on a new proprietary device architecture that is also being claimed in this patent and that allows the implementations of the design equations of our methodology.