Direct ion-implanted 0.12 /spl mu/m GaAs MESFET with f/sub t/ of 121 GHz and f/sub max/ of 160 GHz

摘要

An 0.12 /spl mu/m gate length direct ion-implanted GaAs MESFET exhibiting excellent DC and microwave characteristics has been developed. By using a shallow implant schedule to form a highly-doped channel and an AsH/sub 3/ overpressure annealing system to optimize the shallow dopant profile, the GaAs MESFET performance was further improved. Peak transconductance of 500 mS/mm was obtained at I/sub ds/=380 mA/mm. A noise figure of 0.9 dB with associated gain of 8.9 dB were achieved at 18 GHz. The current gain cutoff frequency f/sub max/ of 160 GHz indicates the suitability of this 0.12 /spl mu/m T-gate device for millimeter-wave IC applications.