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首页> 外文期刊>IEEE Journal of Solid-State Circuits >A 20 GHz 8 bit multiplexer IC implemented with 0.5 /spl mu/m WN/sub x//W-gate GaAs MESFET's
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A 20 GHz 8 bit multiplexer IC implemented with 0.5 /spl mu/m WN/sub x//W-gate GaAs MESFET's

机译:20 GHz 8位多路复用器IC,采用0.5 / spl mu / m WN / sub x // W门GaAs MESFET实现

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摘要

An ultrahigh-speed 8 bit multiplexer (MUX) has been developed for future-generation optical-fiber communication systems having a data rate of 20 Gb/s. This IC was fabricated using a 0.5 /spl mu/m WN/sub x//W-gate GaAs MESFET process based on optical lithography, ion implantation, and furnace annealing for good reproducibility and high throughput. The WN/sub x//W bilayer gate has a low sheet resistance, improving the circuit high frequency performance. To attain 20 GHz operation, advanced circuit techniques for the source-coupled FET logic (SCFL) were introduced. A cross coupled source-follower (CCSF) was developed mainly for the highest speed buffers to enhance the bandwidth. The first-stage T-type flip-flop was designed with optimization techniques and operated up to 21.1 GHz.
机译:已经为数据速率为20 Gb / s的下一代光纤通信系统开发了超高速8位多路复用器(MUX)。该IC使用0.5 / splμm/ m的WN / sub x // W栅GaAs MESFET工艺制造,该工艺基于光学光刻,离子注入和熔炉退火,具有良好的可重复性和高通量。 WN / sub x // W双层栅极具有较低的薄层电阻,从而改善了电路的高频性能。为了达到20 GHz的工作频率,引入了用于源极耦合FET逻辑(SCFL)的先进电路技术。交叉耦合源跟随器(CCSF)的开发主要是为了实现最高速度的缓冲区以提高带宽。第一阶段T型触发器采用优化技术进行设计,工作频率高达21.1 GHz。

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