N-channel MOSFETs fabricated on homoepitaxy-grown 3C-SiC films

摘要

We present results of the enhancement mode, n-channel 3C-silicon carbide (SiC) MOSFETs fabricated on homoepitaxy 3C-SiC films. The fabricated devices exhibit excellent gate-controlled linear and saturation regimes of operation. The average effective channel mobility is found to be 229 cm/sup 2//Vs. The breakdown field of the gate oxide is observed at be 11 MV/cm and the subthreshold swing is determined to be 280 mV/decade.