Characteristics of Ultrashallow Hetero Indium–Gallium–Zinc–Oxide/Germanium Junction

摘要

In this letter, we demonstrate an n-indium–gallium–zinc–oxide (IGZO)/i-germanium (Ge) heterojunction diode with an ultrashallow junction depth of $sim$ 37 nm. X-ray diffraction, atomic force microscopy, and secondary ion mass spectrometry analyses are performed to precisely investigate the n-IGZO and n-IGZO/i-Ge junctions. When the junction diodes are annealed at between 400 $^{circ}hbox{C}$ and 600 $^{ circ}hbox{C}$, a very high on-current density $(hbox{180}{-}hbox{320} hbox{A/cm}^{2})$, which is comparable to that of a Ti/i-Ge reference junction, is obtained. In particular, after the 600 $^{circ}hbox{C}$ anneal, a fairly high on/ off-current ratio $(hbox{7} times hbox{10}^{2})$ is also observed.