Efficiency Improvement of Three-junction Photovoltaic Cell Based on Gallium-Phosphide-Oxide,Indium-Gallium-Arsenide and Indium-Gallium-Antimonide

摘要

In this research paper we present a new high efficient three-junction photovoltaic cell with antireflective coating.The aim of our research work is to improve the photon absorption and reduce the photon reflection as well as the trasmission.The use of anti-reflective coating(ARC),Gallium-Phosphide-Oxide on the photovoltaic cell based on InGaAs/InGaSb has increased the photon absorption significantly.In this work we have analyzed the photon absorption,photon reflection and photon transmission of existing high efficient solar cells.Real Time Photonics Simulator has been used to simulate the performance of the solar cells.The simulation results show' that with the inclusion of Gallium-Phosphide-Oxide on the multi-junction photovoltaic cell the photon absorption increases significantly.Our threejunction photovoltaic cell based on GaPO/In0.53Ga0.47As/In0.5Ga0..5Sb shows dramatic improvement of photon absorption in the range of 479nm-767nm wavelength of the solar spectrum.With the addition of GaPO in place of GaP we see a tremendous increase of photon absorption,which significantly increases the efficiency of the photovoltaic cell.