Nonvolatile Charge-Trap Memory Transistors With Top-Gate Structure Using In–Ga–Zn-O Active Channel and ZnO Charge-Trap Layer

摘要

We proposed a charge-trap-type memory transistor with a top-gate structure composed of ${rm Al}_{2}{rm O}_{3}$ blocking/ZnO charge-trap/IGZO active/${rm Al}_{2}{rm O}_{3}$ tunneling layer. The memory ON/OFF ratio higher than six-orders-of magnitude was obtained after the programming when the width and amplitude of program pulses were 100 ms and ${pm}{rm 20}~{rm V}$, respectively. Excellent endurance was successfully confirmed under the repetitive programming with $10^{4}~{rm cycles}$. The memory ON/OFF ratio higher than $10^{3}$ was guaranteed even after the lapse of $10^{4}~{rm s}$. Interestingly, the retention properties were affected by the bias conditions for read-out operations.