4H–SiC Step Trench Gate Power Metal–Oxide–Semiconductor Field-Effect Transistor

摘要

In this letter, an improved 4H–SiC step trench-gate power metal–oxide–semiconductor field-effect transistor (MOSFET) with a p-n junction in the trench is proposed. The step trench significantly reduces the ON-resistance of the device. And the p-n junction in the trench reduces the gate charge. Compared with the conventional p shielding trench MOSFET structure, simulation results show that the specific ON-resistance and gate charge of the proposed device are improved by 26.4% and 34.7%, respectively. A 43.4% improvement in the figure of merit (including the breakdown voltage and ON-resistance) is also observed.