Performance Improvement by Blanket Boron Implant in the Sigma-Shaped Trench Before the Embedded SiGe Source/Drain Formation for 28-nm PMOSFET

摘要

The blanket boron implant (BBI) in the sigma-shaped trench before the embedded SiGe (eSiGe) source/drain (S/D) formation for 28-nm PMOSFET is proposed in this letter. It is demonstrated that the BBI can significantly reduce the S/D junction capacitance with little influence on On/Off characteristic. In addition, the 1/ ${f}$ noise is also effectively lowered.