Fabrication and Investigation of a Lateral Insulated Gate-Bipolar-Transistor With Ultrafast Turn-Off Speed

摘要

A hole-controlled lateral insulated gate bipolar transistor (HC-LIGBT) device with an ultrafast turn-off speed is investigated and experimentally demonstrated. Utilizing a high-permittivity material as the dielectric on the novel device structure, the hole carrier movements are controlled. In the device ON-state, the anode plasma injection effect is amplified to improve the current density. In the OFF-state, the electrons in the drift region are rapidly neutralized by the hole current, after which the anode voltage is pulled to the bus voltage by the external driving circuit through a voltage couple to realize a fast turn-off speed. The ON-state current is not compromised for the switching speed. The device is fabricated with a mu m fully custom process using Si3N4 as the dielectric. The test results indicate that the breakdown voltage of the device is 350 V, the ON-state current density is 155 A/cm(2) at an anode voltage of 2 V, and the rising edge of the voltage on the anode in the turn-off state lasts only 90 ns.