High-Speed Lateral Photodetectors on Semi-Insulating InGaAs and InP

摘要

A new type of high-performance, planar PIN photodetector operating in the 1.0-1.6 micron wavelength region has been fabricated on semi-insulating InP and InGaAs entirely by formation of alloyed contacts. Their planar geometry and simple fabrication process, that does not require a separate step to form the junction, together with their high speed under reverse bias (FWHM - 50 ps) and sensitivity (eta = 40% at lambda = 1.24 micron, without anti-reflection coating) make these devices attractive for integration with FETs and for photodetector arrays. Keywords include: Planar PIN Photodetector, Alloyed contacts, and Photodetector Arrays. (Reprints)