Lateral Photodetectors on Semi-Insulating InGaAs and InP

摘要

A new type of high-performance lateral PIN photodector has been formed by alloying p-type and n-type metallic contacts onto semi-insulating InGaAs or InP without a separate junction fabrication step. Low dark current ( <1nA), high external quantum efficiency (40% at lambda = 1.24 micrometers, without antireflection coating), and high speed (full width at half-maximum < 50 ps) have been obtained with reverse biias of 10 V. These characteristics, plus the simplicity of fabrication and the planar laeral configuration, make these devices attractive for monolithic integraation with field-effect transistors and for photodetector arrays.