Fabrication and Comparison of Bumpless Wafer-on-Wafer Integration and Bump-Containing Chip-on-Chip Integration

摘要

This paper develops a bumpless wafer-on-wafer (WoW) memory integration approach in order to increase its throughput and reliability without sacrificing the electrical and mechanical performances compared to the bump-containing chip-on-chip (CoC) integration. The features are that through silicon vias are bottom–up filled after multilayer wafers bonding and connected to the predeposited redistribution layers on the front side of each wafer simultaneously. A given mass of four-layer bumpless WoW integration samples and bump-containing CoC integration samples is fabricated. The electrical testing, X-ray inspection, cross-section observation, stress testing, and thermal cycling testing are employed in order to compare the characterization of the two integration approaches. All test results support that there is a better performance, higher throughput, and lower cost in the proposed bumpless WoW integration approach, which indicates that this proposed approach may be a good candidate for memories-stacking application.