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Formation of edge dislocations in thin epitaxial YBCO films

机译:外延YBCO薄膜中边缘位错的形成

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Transmission electron microscopy (TEM) of thin YBa2Cu 3O7-δ (YBCO) films on different single-crystalline substrates revealed (by Moire patterns) edge dislocations having non-superconducting cores normal to the substrate. The dislocations are in small-angle boundaries with the average density as high as 1011 cm-2. An extremely high density of dislocations is thought to be the cause of the high critical current density in YBCO epitaxial films. The mechanism for dislocation formation is considered in the framework of a computer model. Computer modeling provided the details of the dislocation arrangement either in domain boundaries or in twist boundaries, depending on the angle of the in-plane misorientation between film and substrate lattices. The model is found to be in goad agreement with experimental data on dislocations in YBCO superconducting films
机译:不同单晶衬底上的YBa2Cu3O7-δ(YBCO)薄膜的透射电子显微镜(TEM)显示(通过莫尔条纹)边缘位错具有垂直于衬底的非超导芯。位错在小角度边界内,平均密度高达1011 cm-2。据认为,极高的位错密度是YBCO外延膜中高临界电流密度的原因。在计算机模型的框架内考虑了位错形成的机制。计算机建模提供了在晶畴边界或扭曲边界中的位错排列的细节,具体取决于薄膜和基板晶格之间的面内取向差的角度。发现该模型与YBCO超导薄膜中的位错的实验数据一致

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