BI-EPITAXIAL JOSEPHSON JUNCTION DEVICE USING HIGH TEMPERATURE SUPERCONDUCTING Y1BA2CU3O7-X(YBCO) THIN FILM, AND MANUFACTURING METHOD OF THE SAME

摘要

The present invention relates to a bi-epitaxial Josephson junction device and a method of manufacturing the same. More particularly, the present invention relates to a bi-epitaxial Josephson junction using a high-temperature superconducting Y ₁ Ba ₂ Cu ₃ O _{7 -x} (YBCO) junction device and a manufacturing method thereof. In the present invention, a single crystal (SrTiO ₃ or LaAlO ₃ ) substrate having a crystal constant similar to that of a high-temperature superconductor (YBCO) is cut at an angle of? ° with respect to the surface vertical vector of the c axis, YSZ layer) is deposited by rf sputtering method and half of the thin film layer (YSZ layer) is deposited on the b-axis tilt boundary of the third figure (b) or the b-axis twist boundary of the third figure (c) (CeO ₂ ) deposited on the substrate by rf sputtering method, followed by photolithography and ion milling to form a twisted boundary, and a high-temperature superconductor (CeO ₂ ) YBCO) film by dc sputtering to produce a Josephson junction device that can be integrated and yielded, and by cutting the substrate to a small, arbitrary angle with the c-axis for the surface vertical vector The junction angle can be adjusted, and a bi-epitaxial Josephson junction device having a good characteristic (high IcRn value) can be obtained.