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Configuration and local elastic interaction of ferroelectric domains and misfit dislocation in PbTiO3/SrTiO3 epitaxial thin films

机译:PbTiO3 / SrTiO3外延薄膜中铁电畴的构型和局部弹性相互作用以及失配位错

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摘要

We have studied the strain field around the 90° domains and misfit dislocations in PbTiO3/SrTiO3 (001) epitaxial thin films, at the nanoscale, using the geometric phase analysis (GPA) combined with high-resolution transmission electron microscopy (HRTEM) and high-angle annular dark field––scanning transmission electron microscopy (HAADF-STEM). The films typically contain a combination of a/c-mixed domains and misfit dislocations. The PbTiO3 layer was composed from the two types of the a-domain (90° domain): a typical a/c-mixed domain configuration where a-domains are 20–30 nm wide and nano sized domains with a width of about 3 nm. In the latter case, the nano sized a-domain does not contact the film/substrate interface; it remains far from the interface and stems from the misfit dislocation. Strain maps obtained from the GPA of HRTEM images show the elastic interaction between the a-domain and the dislocations. The normal strain field and lattice rotation match each other between them. Strain maps reveal that the a-domain nucleation takes place at the misfit dislocation. The lattice rotation around the misfit dislocation triggers the nucleation of the a-domain; the normal strains around the misfit dislocation relax the residual strain in a-domain; then, the a-domain growth takes place, accompanying the introduction of the additional dislocation perpendicular to the misfit dislocation and the dissociation of the dislocations into two pairs of partial dislocations with an APB, which is the bottom boundary of the a-domain. The novel mechanism of the nucleation and growth of 90° domain in PbTiO3/SrTiO3 epitaxial system has been proposed based on above the results.
机译:我们使用几何相分析(GPA)结合高分辨率透射电子显微镜(HRTEM)和高光谱技术研究了纳米级PbTiO3 / SrTiO3(001)外延薄膜在90°畴附近的应变场和失配位错角环形暗场-扫描透射电子显微镜(HAADF-STEM)。薄膜通常包含a / c混合畴和错配位错的组合。 PbTiO3层由两种类型的a域(90°域)组成:典型的a / c混合域配置,其中a域的宽度为20–30 nm,纳米域的宽度约为3 nm 。在后一种情况下,纳米级a畴不接触膜/基底界面。它离接口很远,并且源于错位错位。从HRTEM图像的GPA获得的应变图显示了a域和位错之间的弹性相互作用。法向应变场和晶格旋转在它们之间相互匹配。应变图显示,α-区成核发生在失配位错处。围绕失配位错的晶格旋转会触发a域的成核;错配位错周围的正常应变使α域的残余应变松弛。然后,伴随着垂直于失配位错的额外位错的引入以及位错与APB的底部边界APB分离成两对部分位错,伴随着a位域的生长。基于以上结果,提出了PbTiO3 / SrTiO3外延体系中90°畴成核和生长的新机理。

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