Corrections to “Growth of Lanthanum Manganate Buffer Layers for Coated Conductors via a Metal–Organic Decomposition Process”

摘要

In our prior paper, we reported forming (110)-oriented LaMnO$_3$ on a biaxially textured Ni-3at%W substrate. Chemical analysis of these films subsequent to publishing the paper showed only La and O—there was no Mn present in the film. The film was actually (400)-oriented La$_2$O$_3$ with the cubic bixbyite structure. Subsequent studies also showed that MnO film is not stable on Ni and Ni–W substrate surfaces at 1100 $^{circ}$C and $hbox{P}_{{rm O}2} = 10^{-16}$ atm where bulk MnO is stable.