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Metal-Organic Decomposition-Mediated Nanoparticulate Vanadium Oxide Hole Transporting Buffer Layer for Polymer Bulk-Heterojunction Solar Cells

机译:金属有机分解介导的纳米颗粒纳米颗粒钒氧化物空穴传输缓冲层用于聚合物散装 - 异质结太阳能电池

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摘要

In this study, a solution-processable compact vanadium oxide (V O ) film with a globular nanoparticulate structure is introduced to the hole transport layer (HTL) of polymer bulk-heterojunction based solar cells comprised of PTB7:PC BM by using a facile metal-organic decomposition method to replace the conventionally utilized poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS). For this, a biocompatible structure-determining agent, polyethylene glycol (PEG, 300), is used as an additive in the precursor to form the nanoparticulate compact V O (hereafter referred to as NP-V O ) film, which possesses an outstandingly smooth surface morphology. The introduction of NP-V O HTL via the solution process with a neutral pH condition successfully improved the stability by preventing the decomposition of indium tin oxide (ITO) glass and the penetration of heavy-metal components and moisture, which are considered as the crucial drawbacks of using PEDOT:PSS. Over 1440 h (60 days) of the stability test, an organic solar cell (OSC) with NP-V O showed a significant durability, maintaining 82% of its initial power conversion efficiency (PCE), whereas an OSC with PEDOT:PSS maintained 51% of its initial PCE. Furthermore, due to the positive effects of the modified surface properties of NP-V O , the PCE was slightly enhanced from 7.47% to 7.89% with a significant improvement in the short-circuit current density and fill factor.
机译:在该研究中,将具有球状纳米颗粒结构的溶液可加工的紧凑型氧化钒(VO)膜引入到由PTB7:PC BM组成的聚合物体积 - 异质结的太阳能电池的空穴传输层(HTL),通过使用容易金属 - 有机分解方法以替代常规使用的聚(3,4-乙二氧基噻吩):聚(苯乙烯磺酸盐)(PEDOT:PSS)。为此,使用生物相容性的结构测定剂,聚乙二醇(PEG,300)作为前体中的添加剂,以形成纳米颗粒的紧凑型(以下称为NP-V O)膜,这具有偏远的光滑表面形态学。通过溶液方法引入NP-V O HTL,通过防止氧化铟锡(ITO)玻璃的分解和重金属部件和水分的渗透,通过溶液方法引入稳定性,并将其被认为是至关重要的使用PEDOT的缺点:PSS。超过1440小时(60天)的稳定性测试,具有NP-V O的有机太阳能电池(OSC)显示出显着的耐用性,保持其初始功率转换效率的82%(PCE),而带PET的OSC其初始PCE的51%。此外,由于NP-V O的改性表面性质的正效应,PCE从7.47%略微增强,从7.47%略微增强,随着短路电流密度和填充因子的显着改善。

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