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Growth of lanthanum manganate buffer layers for coated conductors via a metal-organic decomposition process.

机译:通过有机金属分解过程生长用于涂覆导体的锰酸镧缓冲层。

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摘要

LaMnO3 (LMO) was identified as a possible buffer material for YBa2Cu3O7-x conductors due to its diffusion barrier properties and close lattice match with YBa2Cu 3O7-x. Growth of LMO films via a metal-organic decomposition (MOD) process on Ni, Ni-5at.%W (Ni-5W), and single crystal SrTiO3 substrates was investigated. Phase-pure LMO was grown via MOD on Ni and SrTiO 3 substrates at temperatures and oxygen pressures within a thermodynamic "process window" wherein LMO, Ni, Ni-5W, and SrTiO3 are all stable components. LMO could not be grown on Ni-5W in the "process window" because tungsten diffused from the substrate into the overlying film, where it reacted to form La and Mn tungstates. The kinetics of tungstate formation and crystallization of phase-pure LMO from the La and Mn acetate precursors are competitive in the temperature range explored (850--1100°C). Temperatures 850°C might mitigate tungsten diffusion from the substrate to the film sufficiently to obviate tungstate formation, but LMO films deposited via MOD require temperatures ≥850°C for nucleation and grain growth. Using a Y2O3 seed layer on Ni-5W to block tungsten from diffusing into the LMO film was explored; however, Y2O3 reacts with tungsten in the "process window" at 850--1100°C. Tungsten diffusion into Y2O3 can be blocked if epitaxial, crack-free NiWO4 and NiO layers are formed at the interface between Ni-5W and Y2O3. NiWO 4 only grows epitaxially if the overlying NiO and buffer layers are thick enough to mechanically suppress (011)-oriented NiWO4 grain growth. This is not the case when a bare 75 nm-thick Y2O3 film on Ni-5W is processed at 850°C. These studies show that the Ni-5W substrate must be at a low temperature to prevent tungsten diffusion, whereas the LMO precursor film must be at elevated temperature to crystallize. An excimer laser-assisted MOD process was used where a Y2O 3-coated Ni-5W substrate was held at 500°C in air and the pulsed laser photo-thermally heated the Y2O3 and LMO precursor films. This resulted in a textured, phase-pure LMO film.
机译:LaMnO3(LMO)由于其扩散阻挡特性和与YBa2Cu 3O7-x的紧密晶格匹配而被确定为YBa2Cu3O7-x导体的可能缓冲材料。研究了通过金属有机分解(MOD)工艺在Ni,Ni-5at。%W(Ni-5W)和SrTiO3单晶衬底上生长LMO膜的方法。纯相的LMO通过MOD在Ni和SrTiO 3基板上的温度和氧气压力下,在热力学“工艺窗口”内生长,其中LMO,Ni,Ni-5W和SrTiO3均为稳定组分。 LMO无法在“工艺窗口”中的Ni-5W上生长,因为钨从基底扩散到上面的膜中,在钨膜中反应形成La和Mn钨酸盐。在探索的温度范围(850--1100°C)中,钨酸盐形成和从乙酸镧和乙酸锰前体中纯相改性LMO结晶的动力学具有竞争力。 <850°C的温度可能足以缓解钨从基材到薄膜的扩散,从而消除钨酸盐的形成,但是通过MOD沉积的LMO薄膜需要≥850°C的温度才能成核和晶粒长大。探索了在Ni-5W上使用Y2O3种子层来阻止钨扩散到LMO膜中;但是,Y2O3在850--1100°C的“工艺窗口”中与钨发生反应。如果在Ni-5W和Y2O3之间的界面上形成外延,无裂纹的NiWO4和NiO层,则可以阻止钨扩散到Y2O3中。如果上覆的NiO和缓冲层的厚度足以机械抑制(011)取向的NiWO4晶粒生长,则NiWO 4仅在外延生长。当在850°C下处理Ni-5W上75nm厚的Y2O3裸膜时,情况并非如此。这些研究表明,Ni-5W衬底必须处于低温下以防止钨扩散,而LMO前驱体膜必须处于高温下才能结晶。使用受激准分子激光辅助的MOD工艺,其中将Y2O 3涂层的Ni-5W衬底在空气中保持在500°C,然后脉冲激光对Y2O3和LMO前体膜进行光热加热。这产生了具有纹理的,纯相的LMO膜。

著录项

  • 作者

    Venkataraman, Kartik.;

  • 作者单位

    The University of Wisconsin - Madison.;

  • 授予单位 The University of Wisconsin - Madison.;
  • 学科 Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2007
  • 页码 217 p.
  • 总页数 217
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
  • 关键词

  • 入库时间 2022-08-17 11:40:36

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