Controlling film growth with selective excitation: Chemical vapor deposition growth of silicon

摘要

We propose a method of controlling the growth mode in an epitaxial system. It takes advantage of differences in the vibrational frequencies of adatom-substrate bonds at terraces and steps. With a properly tuned infrared laser, one can selectively excite only the adatom-substrate bonds at steps and enhance the mobility of these adatoms, consequently promoting step-flow growth and reducing film roughness. The feasibility of this method is shown theoretically with respect to the prototype system of chemical vapor deposition growth of silicon.