LIQUID RAW MATERIAL FOR CHEMICAL VAPOR GROWTH METHOD, FILM DEPOSITION METHOD BY CHEMICAL VAPOR GROWTH METHOD AND CHEMICAL VAPOR GROWTH DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a liquid raw material for a chemical vapor growth method which can realize the film deposition of a silicate compound of high quality, to provide a film deposition method by a chemical vapor growth method, and to provide a chemical vapor growth device. SOLUTION: An organometallic compound, a siloxane compound and an organic solvent for dissolving the organometallic compound and siloxane compound are incorporated into a liquid raw material for a chemical vapor growth method. When the organometallic compound contains an alkoxyl group having carbon atoms equal to or more than that of a propoxy group (such as a tertiary butoxy group) and a βdiketone group (such as a tetramethylheptanedionate group), its film deposition stability becomes excellent. As the organic solvent, diethyl ether, tetrahydrofuran, normal octane, isooctane or the like are preferably adopted. As the siloxane compound, trimethoxysilane having high solubility to a nonpolar solvent, and hexamethyldisiloxane and octamethylcyclotetrasiloxane dissolving even into a polar solvent are preferably adopted.