Growth of stable amorphous siliconfilms by gas-flow-controlled RF plasma-enhanced chemical vapor deposition

摘要

We proposed a multi-hollow discharge-based plasma-enhanced chemical vapor deposition (PECVD) technique with gas-flow control for preparation of highly stable a-Si:H films at high rates. The conditions for multi-hollow plasma production have been optimized under radio-frequency (RF) and low pressure conditions. The effectiveness of the gas-flow control has been confirmed. As a result, a-Si:H films with a Si-H_2 density of 0 at.% were successfully obtained at a relatively high growth rate of 0.27 nm/s by the novel technique, even under RF conditions. Further optimization of electrode configuration and deposition conditions would improve the growth rate of a-Si:H films with high stability against light soaking.