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METHOD FOR DEPOSITING CONFORMAL AMORPHOUS CARBON FILM BY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD)
METHOD FOR DEPOSITING CONFORMAL AMORPHOUS CARBON FILM BY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD)
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机译:等离子体增强化学气相沉积(PECVD)沉积共形非晶碳膜的方法
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摘要
Methods and apparatus for depositing an amorphous carbon layer on a substrate are provided. In one embodiment, a deposition process includes positioning a substrate in a substrate processing chamber, introducing a hydrocarbon source having a carbon to hydrogen atom ratio of greater than 1:2 into the processing chamber, introducing a plasma initiating gas selected from the group consisting of hydrogen, helium, argon, nitrogen, and combinations thereof into the processing chamber, with the hydrocarbon source having a volumetric flow rate to plasma initiating gas volumetric flow rate ratio of 1:2 or greater, generating a plasma in the processing chamber, and forming a conformal amorphous carbon layer on the substrate.
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