在深紫外LIGA加工中,制作高精度大高宽比的微器件是很困难的.难点在于SU-8光刻胶对紫外光的吸收系数随着波长变短而很快变大,而且其穿透深度也相应迅速变小;同时由于紫外光的衍射效应,获得高精度的大高宽比结构并不容易.本文深入研究了影响紫外深度光刻图形转移精度的如下因素;衍射效应、曝光剂量、紫外光波长和蝇眼透镜的分布等等.建立了基于模型区域的校正系统,该校正系统采用了分类分区域的思想将掩模图形按其畸变的特点进行了分类,在校正过程中对不同的类别分别建立校正区域,在每一校正区域内进行校正优化处理和校正评价,这种基于模型的分类分区域评价思想,使得校正过程有效且实时,该校正方法不仅降低了校正的复杂性,同时提高了校正的效率.%The diffraction and absorption of UV light in SU-8 resist makes it very difficult to fabricate high precision microstructures with high aspect ratio in the process of UV LIGA,because the absorption coefficient gets bigger and the penetration depth gets shorter rapidly as the wavelength gets shorter.Therefore,such factors having effect on the precision of deep UV lithography as diffraction effect,exposure dosage,wavelength and distribution of fly's eyes lens etc.,are investigated in this paper.A method of correcting pattern transfer errors is developed through investigation of pattern transfer errors.Proposed method adopts the feature classification and area evaluation to modify the mask contour,thereby making the lithography contour as close as possible to the desired contour.In addition,it can be used to reduce the complexity and enhance the correction efficiency.
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