60Coγ光子在SiO2材料中能量沉积的研究

摘要

T he study is made to solve the problem that the ionizing radiation effect of high-energy photons has a great effect on the application of semiconductor materials .By using high-energy photons cross-section database and the monte carlo simulation code which is written with Cprogramming language ,the reaction process of high-energy photons in SiO2 layer of the MOS device is simulated .The results show that the ionization damage of the MOS device has direct relationship with the thickness of SiO2 layer and the reduction of its thickness can significantly reduce the energy deposition in SiO 2 ,thus reducing the ionization damage to M OS .%针对目前高能光子的电离辐射效应极大的影响半导体材料广泛应用的现状，以M OS器件为研究对象，利用高能光子反应截面数据库，采用蒙特卡罗模拟方法，用C语言编写了模拟程序，对高能光子在M OS器件的SiO2层中的输运过程进行了模拟和计算。计算结果表明，M OS器件的电离损伤与SiO2层的厚度关系很大，减小SiO2层的厚度可以明显地减少SiO2中的能量沉积，使得M OS器件的电离损伤减小。