应变 SrTiO 3／GaAs 异质结的整流特性研究

摘要

采用脉冲激光沉积法在P型GaAs基片上制备了缺氧的钛SrTiO3薄膜．X射线衍射测量证明SrTiO3薄膜外延生长．I-V曲线测量显示很好的整流性，说明该SrTiO3薄膜与GaAs 形成p-n结．该结的电输运机制为应变导致的隧穿电流，且其电输运性质不受光照影响．%We have prepared oxygen-deficient SrTiO 3 films on p-GaAs substrates using pulsed laser deposi-tion.X-ray diffraction measurements showed that SrTiO 3 thin films were epitaxially grown .The I-V curves showed good rectifying properties , indicating that a p-n junction formed between SrTiO 3 films and GaAs inter-face.The electrical transport mechanism of the junction should be strain induced tunneling current .The elec-trical transport properties were not affected by illumination .