AlGaAs/InGaAs/GaAs Strained-Layer Heterojunction Bipolar Transistors by Molecular Beam Epitaxy

摘要

The growth and characteristics of the first AlGaAs/InGaAs/GaAs HBTs are reported. Layers with up to 10% indium content appeared to be free of misfit dislocations, and resulted in HBTs with good I/V characteristics which scaled with in content according to theory.