碳化硅ICP刻蚀速率及表面形貌研究

摘要

SiC材料由于其高的禁带宽度（2.3～3.4 eV），10倍于Si的击穿电压而越来越受到重视，尤其是在高温环境中，是制作高温器件的理想材料。但同时由于SiC的高硬度，化学性质稳定，使得SiC的加工也变的较为困难。刻蚀作为加工SiC的理想手段运用也越来越广泛，文中就此展开研究，详细研究ICP刻蚀过程中各参数对其刻蚀速率及表面形貌的影响，对加工SiC具有一定指导意义。%Due to its high band width (2.3~3.4eV) of SiC,the breakdown voltage is 10 times of the breakdown voltage of Si and has been paid more and more attention ,especially in the high temperature environment ,and it is the ideal material for manufacturinghigh temperature devices.But at the same time,due to the high hardness of SiC and stable chemical property ,the processingof SiC has become more difficult.As an ideal means,etching processing is more and more widely used ,the research was launchedin this paper.The detailed study of the parameters affecting the ICP etching process for the etch rate and surface morphology waslaunched,which has certain guiding significance to the processing of SiC .