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Surface morphology evolution of a polycrystalline diamond by inductively coupled plasma reactive ion etching (ICP-RIE)

机译:电感耦合等离子体反应离子刻蚀(ICP-RIE)的多晶金刚石表面形貌演变

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摘要

The needle-like surface morphology evolution in oxygen plasma in combination with a secondary gas (Cl-2, CHF3 or CF4) by inductively coupled plasma reactive ion etching (ICP-RIE) on a free-standing polycrystalline diamond was investigated. The addition of CF4 can produce trans-polyacetylene (t-PA), which is similar to the result when the pure O-2 etching takes place, and generate compact needle-tip particles. However, the t-PA disappears with the introduction of Cl or H ions. The optimised etching parameters for the needle-like structure formation are as following: Cl-2/O-2 ratio 20% and RF-power (RFP) 100 W, where more compact and even nano-needles are realised with an average etching rate of 2 mu m/min. The Cl-2/O-2 plasma etching results indicate that the time-dependent etching mechanism of diamond nano-needles results from (1 1 1) crystal plane selective etching and preferential graphitisation at the twin-plane boundary and dislocation area. (C) 2019 Elsevier B.V. All rights reserved.
机译:研究了在独立多晶金刚石上通过电感耦合等离子体反应离子刻蚀(ICP-RIE)在氧等离子体中与二次气体(Cl-2,CHF3或CF4)结合时的针状表面形态演变。 CF4的添加可以产生反式聚乙炔(t-PA),这与纯O-2蚀刻时的结果相似,并生成致密的针尖颗粒。但是,t-PA随Cl或H离子的引入而消失。用于形成针状结构的最佳蚀刻参数如下:Cl-2 / O-2比率为20%,RF功率(RFP)为100 W,其中平均蚀刻速率可实现更紧凑甚至均匀的纳米针2微米/分钟Cl-2 / O-2等离子体刻蚀结果表明,金刚石纳米针随时间变化的刻蚀机理是由(1 1 1)晶面选择性刻蚀和在双晶面边界和位错区域的优先石墨化所致。 (C)2019 Elsevier B.V.保留所有权利。

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