Investigation of Fabricated Through Glass Via (TGV) Process by Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE) for 3D-IC Package Applications

摘要

This paper presents the manufacturing process of through glass via (TGV) structure and direct implications on the design of quartz-based interposer applications for three-dimensional integrated circuit (3D-IC) packaging technology. First, we analyze detailed substrate thickness formed by dry etching with various associated structures based on the use of thin quartz as a substrate material. Then, we evaluated the holes etched in glass wafers by photolithography and inductively coupled plasma-reactive ion etching (ICP-RIE) techniques. The fabricated TGV morphology showed an excellent characterization between substrate thickness, via diameter, and via shape for a vertical interposer. Finally, we obtain that TGV structure with a diameter of 50 μm in 150 μm thin quartz wafer exhibit high usability for thin wafer processing with the optimized fabrication parameters.