用于2.5D封装技术的微凸点和硅通孔工艺

摘要

Over the past decade, the micro-electronics device's size continuously scaled down according to Moor's Law, and had already got into a real nano ages. Though the characteristic size of integrated circuits has already got under 20nm, but in such particular fields as memory, FPGA, etc., Moor's Law can't meet the request of market which always makes an urgent request for more resource and higher foundary yield within the controllable power. Microbump and TSV as two key technologies applied to a new 2.5D package technology are discussed and analyzed in this paper.%过去几十年里,微电子器件尺寸按照摩尔定律持续减小,已经进入到真正的纳米时代.尽管集成电路的特征尺寸已经进入20nm之下,但是在特定领域,尤其是存储器、FPGA等对资源要求极高的领域,仅仅依靠摩尔定律已经不能满足市场需求.市场永无止境地对在可控功耗范围内实现更多的资源以及更高的代工厂良率提出迫切要求.针对一种新的2.5D封装技术,介绍了其中使用的微凸点(microbump)和硅通孔(through-silicon vias,TSV)等两项关键工艺,并进行了分析.