首页> 外国专利> Die-stacking using through-silicon vias on bumpless build-up layer substrates including embedded-dice, and processes of forming same

Die-stacking using through-silicon vias on bumpless build-up layer substrates including embedded-dice, and processes of forming same

机译:使用硅通孔在无凸点的积层衬底上进行模堆叠,包括嵌入模子,及其形成工艺

摘要

An apparatus includes a coreless substrate with a through-silicon via (TSV) embedded die that is integral to the coreless substrate. The apparatus includes a subsequent die that is coupled to the TSV die and that is disposed above the coreless substrate.
机译:一种装置,包括无芯基板,该无芯基板具有与无芯基板成一体的硅通孔(TSV)嵌入式管芯。所述设备包括耦合至TSV裸片且设置在无芯基板上方的后续裸片。

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