一种用于硅通孔的阻挡层和种子层一体化制备工艺研究

摘要

介绍了一种硅通孔中阻挡层和种子层制备的新型工艺方法.利用磁控溅射的方法在SiO2上沉积1μm的Ti膜.表层的Ti膜湿法氧化后作为种子层,底层Ti膜作为阻挡层.填充材料选择Cu,利用电镀的方法填充.利用热退火的方法来测试Cu的扩散性能,即Ti膜的阻挡特性,热退火试验选择350,400,450℃三种不同的温度.XPS结果表明:在400℃及以下温度阻挡层成功阻挡了Cu的扩散.目前已在硅通孔中初步实现此种结构并完成通孔中Cu的填充.%A novel process of barrier layer and seed layer used in through silicon via(TSV) is presented. Through magnetron sputtering, 1 μm Ti membrane is deposited on SiO2. Surface of Ti membrane is oxidized for seed layer. Bottom of Ti membrane is treated as barrier layer. Filling material is Cu, which is deposited by electroplating method. For measuring the performance of Cu as barrier layer, annealing test is carried out. Three temperatures are selected, that is 350℃ ,400℃,450℃. XPS results indicate that under 400 ℃ barrier layer sucessfully suppresses the diffusion of Cu. Now, the structure is achieved in TSV and Cu filling is realized.