Two types of indium bumps have been fabricated: indium columns fabricated by direct evaporation and indium balls after reflowing indium columns. The impacts of indium columns and indium balls on flip-chip were discussed, and in particular the shear strength of indium columns and indium spheres was tested after flip-chip. Results reveal that the shear strength of indium spheres is 1.5 times higher than that of the indium columns without reflowing after flip-chip, and 2.8 times higher than that of the indium columns with reflow after flip-chip, respectively. In addition, the effects resulted from indium spheres which were exposed in the air for a long time for flip-chip were dissected. Results unravel that the indium spheres have negative influences on the electrical and mechanical connectivity of devices after flip-chip.%制作了2种形式的铟凸点:即直接蒸发沉积的铟柱和将铟柱回流得到的铟球.分别讨论了铟柱和铟球对倒装互连的影响,着重讨论了铟球和铟柱分别和芯片倒装互连后的剪切强度,结果发现在互连未回流的状态下铟球的剪切强度是铟柱的1.5倍,回流后铟球的剪切强度是铟柱的2.8倍.此外,分析讨论了长时间放置在空气中的铟球对倒装互连的影响,结果发现长时间放置在空气中的铟球和芯片互连后,器件的电学与机械连通性能会受到很大的影响.
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