采用溶胶-凝胶结合快速退火工艺在p+-Si基片上制备了SrTiO3薄膜,构建了Ag/SrTiO3/p+-Si结构的阻变器件,研究了退火温度对薄膜微观结构、阻变特性的影响.结果表明:不同退火温度下薄膜均呈结晶态,并且随退火温度升高,薄膜晶粒有增大的趋势,当退火温度为750℃时,薄膜的衍射峰不明显并且有杂峰出现.不同退火温度下Ag/SrTiO3/p+-Si器件都具有明显的双极性阻变特性,但退火温度为850℃与900℃的器件在扫描电压达到某一值时电流会出现一个极小值;经850℃退火处理的器件具有更高的高低电阻比(103～104).当退火温度为800℃及更高时,器件在高阻态下的导电机制以肖特基势垒发射机制为主;低阻态的电荷传导机制则遵循空间电荷限制电流机制(SCLC).器件在200次可逆循环测试下,退火温度为850℃时袁现出较好的抗疲劳特性.%SrTiO3 thin films were deposited on p+-Si substrates by sol-gel technology with rapid thermal annealing method,and the Ag/SrTiO3/p+-Si resistor devices were fabricated.The microstmctures and resistance switching properties of the SrTiO3 films which annealed at various temperatures were investigatec.The results indicate that all the SrTiO3 films show crystalline states,and the grain sizes of the films follow with the increase of the annealing temperature,when the annealing temperature reaches 750 ℃,impurity peak appears and the diffraction peaks of the film are not obvious.Bipolar resistive behaviors are observed in Ag/SrTiO3/p+-Si devices at different annealing temperatures,but the current appears the minimum value at a certain voltage when the annealing temperature reaches 850 ℃ or higher,and the devices annealed at 850 ℃ show a larger high/low resistance ratio of 103～104.The dominant resistive switching conduction mechanism of HRS is Schottky barrier emission when the annealing temperature reaches 800 ℃ or higher,and the LRS changes to space charge limited current (SCLC).The devices annealed at 850 ℃ show better anti-fatigue properties after 200 cycles.
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