首页>
外国专利>
Resistance-changing function body, memory element, manufacturing method therefor, memory device, semiconductor device and electronic equipment
Resistance-changing function body, memory element, manufacturing method therefor, memory device, semiconductor device and electronic equipment
展开▼
机译:变阻功能体,存储元件,其制造方法,存储器件,半导体器件和电子设备
展开▼
页面导航
摘要
著录项
相似文献
摘要
A memory function body 113, which includes a plurality of silver particles 103 covered with silver oxide 104, is interposed between a first electrode 300 and a second electrode 411. A magnitude of a current through the memory function body 113 changes on applying a prescribed voltage between the first electrode 300 and the second electrode 411, and a storage state is discriminated according to the magnitude of the current. The silver particles 103, which capture electric charges, are covered with the silver oxide 104 that serves as a barrier against the passage of electric charges, and therefore, the memory function body 113 can stably retain electric charges at the normal temperature.
展开▼