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Memory Function Body, Particle Forming Method Therefor and, Memory Device, Semiconductor Device, and Electronic Equipment having the Memory Function Body
Memory Function Body, Particle Forming Method Therefor and, Memory Device, Semiconductor Device, and Electronic Equipment having the Memory Function Body
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机译:存储功能体,其形成方法以及具有该存储功能体的存储装置,半导体装置以及电子设备
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摘要
A memory function body has a medium interposed between a first conductor (e.g., a conductive substrate) and a second conductor (e.g., an electrode) and consisting of a first material (e.g., silicon oxide or silicon nitride). The medium contains particles. Each particle is covered with a second material (e.g., silver oxide) and formed of a third material (e.g., silver). The second material functions as a barrier against passage of electric charges, and the third material has a function of retaining electric charges. The third material is introduced into the medium by, for example, a negative ion implantation method.
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