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快速退火

快速退火的相关文献在1986年到2023年内共计227篇,主要集中在无线电电子学、电信技术、物理学、金属学与金属工艺 等领域,其中期刊论文92篇、会议论文12篇、专利文献379281篇;相关期刊59种,包括核技术、微细加工技术、电子元件与材料等; 相关会议12种,包括第十六届全国半导体集成电路硅材料学术会议、2009年全国电子电镀及表面处理学术交流会、2009全国功能材料科技与产业高层论坛等;快速退火的相关文献由692位作者贡献,包括万喜增、刘彩池、孙新利等。

快速退火—发文量

期刊论文>

论文:92 占比:0.02%

会议论文>

论文:12 占比:0.00%

专利文献>

论文:379281 占比:99.97%

总计:379385篇

快速退火—发文趋势图

快速退火

-研究学者

  • 万喜增
  • 刘彩池
  • 孙新利
  • 蒋伟达
  • 郑六奎
  • 乔治
  • 李岩
  • 苏学军
  • 张通和
  • 李理
  • 期刊论文
  • 会议论文
  • 专利文献

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    • 张紫瑞; 汪燕青; 马自明; 马英剑; 李小龙
    • 摘要: 通过扫描电镜喷金仪和退火工艺制备简单、实用的表面增强拉曼散射(SERS)基底.在石英表面溅射出5 nm厚金膜,然后置于真空快速退火炉中,在900°C下进行5 min快速退火,制得纳米金阵列.经检测,纳米金的平均粒径为(79.9±24.5)nm,且分布紧密,热点密集.将该基底用于检测罗丹明B和罗丹明6G溶液的拉曼信号,检测限可达10-6 mol/L,具有较高的实用价值.
    • 艾峥嵘; 于凯; 吴红艳; 李建中
    • 摘要: 利用电子万能试验机、万能硬度计和光学显微镜研究了快速退火工艺对深冷轧制6063铝合金显微组织、硬度、力学性能及断口形貌的影响。结果表明,经相同退火工艺处理,深冷轧制后试样的硬度及力学性能均好于室温轧制。无论是室温轧制还是深冷轧制,随退火温度的升高,试样的硬度和强度均表现为先升高后降低,在200°C左右出现峰值。经150~250°C快速退火后,试样的延伸率表现为先增加后降低,随后又增加。对深冷轧制试样进行200°C、5 min的快速退火处理可获得最优的硬度和强度,快速退火10 min试样的延伸率好于退火5 min的试样。深冷轧制6063铝合金的断裂为韧性断裂,断口形貌为韧窝-微孔聚集型。当退火温度超过200°C时,经深冷轧制试样的显微组织中部分区域发生再结晶。
    • 黄慧君
    • 摘要: 目前,氧化铟锡(ITO)薄膜应用越来越广泛,在显示器、太阳能电池等高科技领域有着不可取代的地位.我国的铟资源储量丰富,且生产工艺趋于成熟.现关于氧化铟锡(ITO)薄膜的研究主要有以下几个方面:一是工艺研究,如镀膜工艺和掺杂工艺及组织结构,二是半导体光电性能及其机理方面的研究.本文将研究重点放在退火处理对ITO薄膜结构及性能的影响,主要通过退火处理过程中的退火温度、时间、退火通氧量以及不同的ITO厚度对薄膜的结构和光电性能的影响,试图探寻其中的影响规律,从而为ITO薄膜在光电器件中的实际应用提供理论基础和依据.
    • 肖卫1; 贾慧民1; 唐吉龙1; 房丹1; 方铉1; 王新伟1; 王登魁1; 魏志鹏1; 王晓华1
    • 摘要: 砷化镓(GaAs)作为一种重要的III-V族材料。具有电子迁移率高、本征载流子浓度低、发光效率高等特性,广泛应用于半导体光电器件中。对GaAs的发光特性的研究可以为GaAs基半导体光电器件的设计提供重要理论依据,而GaAs发光特性的改善对提高GaAs基器件的性能也尤为重要。文章综述了GaAs薄膜发光特性的国内外研究现状,总结了改善GaAs薄膜发光特性的方法,对促进GaAs薄膜在半导体光电器件的应用具有重要的意义。
    • 张文博; 王华; 许积文; 卢晓鹏; 刘国保
    • 摘要: 采用溶胶-凝胶结合快速退火工艺在p+-Si基片上制备了SrTiO3薄膜,构建了Ag/SrTiO3/p+-Si结构的阻变器件,研究了退火温度对薄膜微观结构、阻变特性的影响.结果表明:不同退火温度下薄膜均呈结晶态,并且随退火温度升高,薄膜晶粒有增大的趋势,当退火温度为750°C时,薄膜的衍射峰不明显并且有杂峰出现.不同退火温度下Ag/SrTiO3/p+-Si器件都具有明显的双极性阻变特性,但退火温度为850°C与900°C的器件在扫描电压达到某一值时电流会出现一个极小值;经850°C退火处理的器件具有更高的高低电阻比(103~104).当退火温度为800°C及更高时,器件在高阻态下的导电机制以肖特基势垒发射机制为主;低阻态的电荷传导机制则遵循空间电荷限制电流机制(SCLC).器件在200次可逆循环测试下,退火温度为850°C时袁现出较好的抗疲劳特性.%SrTiO3 thin films were deposited on p+-Si substrates by sol-gel technology with rapid thermal annealing method,and the Ag/SrTiO3/p+-Si resistor devices were fabricated.The microstmctures and resistance switching properties of the SrTiO3 films which annealed at various temperatures were investigatec.The results indicate that all the SrTiO3 films show crystalline states,and the grain sizes of the films follow with the increase of the annealing temperature,when the annealing temperature reaches 750 °C,impurity peak appears and the diffraction peaks of the film are not obvious.Bipolar resistive behaviors are observed in Ag/SrTiO3/p+-Si devices at different annealing temperatures,but the current appears the minimum value at a certain voltage when the annealing temperature reaches 850 °C or higher,and the devices annealed at 850 °C show a larger high/low resistance ratio of 103~104.The dominant resistive switching conduction mechanism of HRS is Schottky barrier emission when the annealing temperature reaches 800 °C or higher,and the LRS changes to space charge limited current (SCLC).The devices annealed at 850 °C show better anti-fatigue properties after 200 cycles.
    • 李亚鹏; 李颖峰; 贺志荣; 郭从盛; 闫群民; 徐峰
    • 摘要: Schottky contact was an important application in the field of the rectifier and photoelectric detection,due to its ex-cellent rectifying behavior.In this paper,the formation mechanism,together with corresponding mathematical model and influencing factors of the Schottky contact between metal and semiconductor was reviewed in detail.The literatures showed that the formation of Schottky contact was caused by Fermi level pinning which was caused by phase formation and the existence of polarization at the in-terface region.Meanwhile,the thermionic emission model was the most widely used to explain the carrier transport mechanism at the interface of Schottky contact.With the further study on the carrier transport mechanism at the interface contact,the thermio-nic-diffusion and thermal field emission model were proposed by researchers.In addition,the related research exhibited that the fast annealing can lead to atoms diffusion,rearrangement and phase formation at the interface of the Schottky contact,which has an im-portant influence on the stability of Schottky contact.%肖特基结具有整流特性,在整流器和光电检测等电子元器件制造中有极其重要的应用,重点介绍了相关研究人员在金属与半导体肖特基接触势垒的形成机理、相关数学模型及其影响因素等方面的研究进展。有研究表明,肖特基势垒的形成主要是由于费米能级的钉扎,而费米能级钉扎则源于界面新相的形成或界面极化键的存在。同时,在肖特基势垒的相关模型中,热电子激发模型是目前应用最为广泛的、用于解释界面载流子传输机制的肖特基接触势垒模型。随着对接触界面载流子传输机制的深入研究,热发射-扩散、热场发射等载流子传输机制模型相继被研究者提出。另外,相关研究表明,快速退火处理可导致肖特基接触界面处的原子扩散、重排、新相生成等现象,对肖特基接触的稳定性产生重要影响。
    • 刘丹丹; 李学留; 李琳; 史成武; 梁齐
    • 摘要: SnS thin films were prepared on glass substrates by RF magnetron sputtering technique and then were rapidly annealed. The crystalline structure, phase composition, chemical composi-tion , surface morphology and relevant optical properties of SnS thin films grown under various sputte-ring power (60-120 W) are investigated by X-ray diffraction ( XRD) , Raman spectroscopy ( Ra-man) , energy dispersive X-ray spectroscopy ( EDS) , atomic force microscopy ( AFM) and ultravio-let-visible-near infrared spectrophotometry ( UV-Vis-NIR) . The results show that all the rapidly an-nealed thin films are crystallized. The crystalline quality, degree of preferential orientation and stoi-chiometry of thin films are improved and the average particle sizes of thin films are enlarged by the increase of sputtering power. Under the condition of sputtering power of 100 W, the sample has high crystalline quality and degree of preferential orientation, the least strain, pure-phase SnS thin film, Sn/S mole ratio of 1∶1. 09, the absorption coefficient of 105 cm-1 and the direct band-gap of 1. 54 eV.%利用射频磁控溅射法在玻璃衬底上沉积SnS薄膜并对其进行快速退火处理,利用X射线衍射( XRD)、拉曼光谱( Raman)、X射线能量色散谱( EDS)、原子力显微镜( AFM)和紫外-可见-近红外( UV-Vis-NIR)分光光度计研究了不同溅射功率(60~120 W)条件下制备的SnS薄膜的晶体结构、物相组成、化学组分、表面形貌以及有关光学特性。结果表明:经快速退火的薄膜均已结晶,提高溅射功率有利于改善薄膜的结晶质量、生长择优取向程度和化学配比,薄膜的平均颗粒尺寸呈增大趋势;溅射功率为100 W的薄膜样品的结晶质量和择优取向度高,薄膜应变最小,且为纯相SnS薄膜,Sn/S组分的量比为1∶1.09,吸收系数达105 cm-1量级,直接禁带宽度为1.54 eV。
    • 阳溦1; 夏晓红1; 高云1
    • 摘要: 本文采用磁控溅射的方法,以金属Ti和ZnO陶瓷为靶材,Ar和O2混合气为工作气体,进行双靶共溅,对沉积的薄膜进行600°C快速退火处理以得到Zn-TiO2薄膜。结果表明,Zn掺杂TiO2引起带隙少量红移。随Zn掺杂元素的含量的增加,Zn-TiO2薄膜的载流子浓度先减小后增加。Zn掺杂引起薄膜的平带电压和光照下薄膜氧化还原反应起始电位值均向负方向移动。Zn掺杂浓度为3.5%时,薄膜光饱和电流密度是不掺杂样品的2.1倍,光分解水性能最佳。
    • 周广宏; 朱雨富; 潘旋
    • 摘要: Rapid thermal annealing (RTA) is widely used in semiconductor fabrication, which can heat sample to high temperature within a short time. In this paper, the development of RTA is reviewed, and the progress and prospect for application on the magnetic thin films are analyzed.%快速退火技术(RTA)可在极短的时间内使器件表面升至高温,该技术被广泛运用在半导体制造领域。综述了RTA的发展历程及其应用于磁性薄膜所取得的进展,并对RTA在磁交换偏置薄膜中的应用前景进行了展望。
    • 刘磊; 马明杰; 刘丹丹; 郭慧尔; 史成武; 梁齐
    • 摘要: 利用脉冲激光沉积(PLD)法在玻璃基片上室温生长SnS薄膜,并在Ar气保护下分别在200,300,400,500,600°C对薄膜进行快速退火处理。利用X射线衍射(XRD)、拉曼光谱仪(Raman)、原子力显微镜(AFM)、场发射扫描电子显微镜( FE-SEM)、紫外-可见-近红外分光光度计( UV-Vis-NIR)、Keithley 4200-SCS半导体参数分析仪研究了快速退火温度对SnS薄膜的晶体结构、表面形貌以及有关光学性质和电学性能的影响。所制备的SnS薄膜样品沿(111)晶面择优取向生长,退火温度为400°C时的薄膜结晶质量最好。薄膜均具有SnS特征拉曼峰。随着退火温度的升高,薄膜厚度逐渐减小,而平均颗粒尺寸逐渐增大。不同退火温度下的SnS薄膜在可见光范围内的吸收系数均为105 cm-1量级,400°C时退火薄膜的直接带隙为1.92 eV。随着退火温度从300°C升高到500°C,电阻率由1.85×104Ω·cm下降到14.97Ω·cm。%SnS thin films were grown by pulsed laser deposition on glass substrates at room tempera-ture, and then the deposited films were rapidly annealed at 200, 300, 400, 500, 600 °C under flowing argon atmosphere. The effects of rapid thermal annealing( RTA) temperature on the micro-structural, morphological, optical properties and electrical properties of SnS thin films were studied by X-ray diffraction( XRD) , laser Raman spectrometry( Raman) , atomic force microscopy( AFM) , field emission scanning electron microscopy ( FESEM) , ultraviolet-visible-near infrared spectropho-tometer ( UV-Vis-NIR) and Keithley 4200-SCS semiconductor parameter analyzer. The results show that SnS thin films grow preferentially oriented in the (111) direction, and the crystalline quality of SnS thin films is the best at 400 °C. Raman characteristic peaks of SnS appear in Raman spectra of the thin films. While the increasing of the annealing temperature, the thickness of the films gradual-ly decrease whereas the average particle sizes of the films increase. The absorption coefficient in the visible region is in the order of 105 cm-1 at different thermal annealing temperature. The direct bandgap of the film is 1 . 92 eV at 400 °C. With the increasing of the thermal annealing temperature from 300 to 500 °C, the resistivity of the films decreases from 1. 85 × 104 to 14. 97 Ω·cm.
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