退火对ZnO薄膜特性的影响与紫外探测器的研制

摘要

The ZnO films were deposited on 5iO2/n-Si and glass by RF magnetron sputtering. The films have a preferential c-axis orientation. The effect of annealing on the properties of ZnO films was investigated. Ag-ZnO-Ag schottky and Au-ZnO-Au photoconductive ultraviolet ( UV ) photodetectors were fabricated on the annealed films deposited on SiO2/n-Si, and had a metal-semiconductor-metal ( MSM) structure with interdigital configuration. The current of the MSM photodetectors increases under 350 nm illuminated of the ultra violet light. The photoresponsivity of the photodetectors is high in the ultraviolet range and it has a maximum value at about 370 nm.%利用射频磁控溅射技术在SiO2/n-Si和石英玻璃衬底上制备了具有C轴择优取向的ZnO薄膜,研究了退火对ZnO薄膜特性的影响,并在以SiO2/n-Si为衬底、退火温度为900℃的薄膜上制作了Ag-ZnO-Ag肖特基型和Au-ZnO-Au光电导型MSM叉指结构的紫外探测器.所制作的两种MSM紫外探测器在350 nm波长紫外光照下电流增加,在紫外波段有较高的响应度,光响应度峰值在370 nm附近.