Method for producing ZnO thin film using atomic layer deposition and annealing process

摘要

The present invention relates to a method for producing a ZnO thin film using atomic layer deposition and after heat treatment step , More specifically, in the step of heat treatment after the ZnO thin film deposited by atomic layer deposition process, the crystallinity of the ZnO films by controlling the annealing atmosphere gas, and the heat treatment temperature, optical properties, electrical properties, such as improved production method of the ZnO thin film relates to. ; According to the present invention, after the ZnO thin film deposited by atomic layer deposition method which can replace the conventional GaN thin film by controlling the heat treatment process, it is possible to manufacture an excellent ZnO films. Thus, by gaining the high ground advantage in the application of technology as among various applications of ZnO light emitting device (LED), by replacing the GaN-based LED that dominates the current LED sector address the burden of hefty royalty payments, and further export increasing effect can be expected.