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Post-Annealing Effects on the Surface Roughness of Undoped and Al-Doped ZnO Thin Films Deposited by Atomic Layer Deposition

机译:对由原子层沉积沉积的未掺杂和Al掺杂的ZnO薄膜的表面粗糙度的后退火效应

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The post-annealing effects on the surface morphological changes of undoped and Al-doped ZnO (ZnO:Al) thin films deposited by atomic layer deposition (ALD) were investigated. The as-grown films were deposited by ALD at growth temperature of 200°C and also, post-annealing of the samples was accomplished at 300°C for 1 h under nitrogen atmosphere. The X-ray diffraction of the films was monitored to study the crystallinity of the films according to post-anneal. The field emission-scanning electron microscopy and atomic force microscopy were conducted to observe the surface morphological changes and measure the root-mean-square roughness of the films in order to analysis the post-annealing effects on the surface roughness of the films.
机译:研究了对由原子层沉积(ALD)沉积的未掺杂和Al掺杂的ZnO(ZnO:Al)薄膜的表面形态变化的退火效应。通过ALD在200℃的生长温度下沉积生长的薄膜,并且还在氮气氛下在300℃下在300℃下在300℃下进行退火。监测薄膜的X射线衍射以研究根据退火的膜的结晶度。进行现场发射扫描电子显微镜和原子力显微镜以观察表面形态变化,并测量薄膜的根均方粗糙度,以分析对薄膜表面粗糙度的退火效应。

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