3GHz～5GHz CMOS超宽带低噪声放大器设计

摘要

提出了一个低噪声、高线性的超宽带低噪声放大器(UWB LNA).电路由窄带PCSNIM LNA拓扑结构和并联低Q负载结构组成,采用TSMC 0.18 μm RFCMOS工艺,并在其输入输出端引入了高阶带通滤波器.仿真结果表明,在1.8V直流电压下LNA的功耗约为10.6 mW.在3 GHz～5 GHz 的超宽带频段内,增益约为13.5 dB,输入、输出回波损耗S11、S22均小于-14 dB,噪声系数(NF)为0.875 dB～4.072 dB,三阶交调点IIP3均值为5.35 dB.%A low noise, high linearity ultra-wideband low noise amplifier(UWB LNA)is presented. The circuit is constituted by PCSNIM LNA circuit topology and parallel low-Q load structure in TSMC 0.18 μm RF CMOS technology, and the high-order band-pass filters are introduced at the input and output ports. Simulation results show that at 1.8 V supply voltage the consumption of LNA is about 10.6 mW. In the 3 GHz~5 GHz UWB frequency band, gain is about 13.5 dB, input and output return loss S11、S22 is less than -14 dB, noise figure(NF) 0.875 dB~4.072 dB, third-order intercept point ⅡP3 is the average of 5.35 dB.