3～5GHz超宽带可变增益CMOS低噪声放大器的设计

摘要

基于TSMC 0.18 μm RF CMOS工艺,设计了一款工作在3 GHz～5 GHz的增益连续可调CMOS低噪声放大器.采用RC电阻负反馈式结构以获得良好的输入匹配和噪声性能.通过改变第二级MOS管的偏流,在工作频段内获得了36.5 dB的连续增益可调.%A CMOS variable gain ultra-wideband low noise amplifier (LNA) operating in 3~5 GHz frequency range was presented based on TSMC 0.18 u,m standard RF CMOS process. A resistive negative feedback structure was used to achieve excellent input match in the band and to optimize the noise performance. By controlling the bias current of the second stage, a continuous gain tuning range of 36.5 dB was achieved.