Study of Fin Profiles and MuGFETs built on SOI Wafers with a Nitride-Oxide Buried Layer (NOx-BL) as the Buried Insulator Layer

摘要

Multiple-gate-MOSFETs (MuGFET) have better short-channel effects (SCE) control than planar MOSFET and MuGFETs are good candidates to replace planar bulk MOSFET for low power applications. A key feature in the MuGFETs is the recess and undercut of the fins