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Formation of the buried insulating SixNy layer in the region of radiation defects created by hydrogen implantation in silicon wafer

机译：在硅晶片中通过氢注入产生的辐射缺陷区域中形成埋入的绝缘sixNy层

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A. V. Frantskevich; A. Saad; A. K. Fedotov; A. V. Mazanik;
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年度 2015
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1. Gettering of Oxygen onto Buried Defect Layer in Hydrogen Implanted Silicon Wafers after Low Temperature Surface Saturation by Oxygen and Vacuum Annealing [J] . A. V. Frantzkevich, Anis M. H. Saad, A. V. Mazanik, Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2004 ,第0期

机译：氧气和真空退火后的低温表面饱和后，氢气在注入氢的硅晶片上的缺陷缺陷层上的吸气
2. Hydrogen gettering at buried defect layers in ion-implanted silicon by plasma hydrogenation and annealing [J] . A.G. Ulyashin, J.S. Christensen, B.G. Svensson, Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms . 2006 ,第1a2期

机译：通过等离子体氢化和退火在离子注入硅中的掩埋缺陷层处吸氢
3. Buried insulating layer formation in Cz Si wafers afterhelium implantation, nitrogen plasma treatment and annealing [J] . N.V. Frantskevich, A.V. Frantskevich, A.K. Fedotov, Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2010 ,第Null期

机译：氦注入，氮等离子体处理和退火后在Cz Si晶片中形成掩埋绝缘层
4. Formation of the buried insulating Si_xN_y layer in the region of radiation defects created by hydrogen implantation in silicon wafer [C] . A.V. Frantskevich, A. Saad, A.K. Fedotov, International Meeting on Gettering and Defect Engineering in Semiconductor Technology . 2006

机译：在硅晶片中由氢气注入产生的辐射缺陷区域中的掩埋绝缘SI_XN_Y层的形成
5. Electrical and optical characterization of intrinsic and ion-implantation induced defects in 6-hydrogen-silicon carbide and 4-hydrogen-silicon carbide. [D] . Scott, Michael Buryl. 1999

机译：6氢碳化硅和4氢碳化硅中本征和离子注入引起的缺陷的电学和光学表征。
6. In Situ Formation of Nanoporous Silicon on a Silicon Wafer via the Magnesiothermic Reduction Reaction (MRR) of Diatomaceous Earth [O] . Patrick Aggrey, Bakhodur Abdusatorov, Yuliya Kan, 2020

机译：通过硅藻土的磁热还原反应（MRR）在硅晶片上原位形成纳米多孔硅
7. Lithium implantation at low temperature in silicon for sharp buried amorphous layer formation and defect engineering [O] . Oliviero, E., L. David, M., F. P. Fichtner, P., 2013

机译：低温锂注入硅中以形成尖锐的掩埋非晶层和缺陷工程
8. Characterization of Insulating Regions Created in Silicon-on-Sapphire by Ion Implantation. [R] . jamba,douglas m. wilson,robert g. 1975

机译：离子注入在蓝宝石上制作绝缘区的表征。

Formation of the buried insulating SixNy layer in the region of radiation defects created by hydrogen implantation in silicon wafer

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